Postdoc position on Graphene-Silicon Hybrid Photodetector

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Postdoc position on Graphene-Silicon Hybrid Photodetector

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The fast development of silicon photonics makes it feasible to construct optical interconnects that can replace electrical interconnects for chip-level data communications.

However, for photodetection in the silicon-based optical interconnect, it still needs to be integrated with another absorbing material, e.g., germanium or IIIV compound semiconductor, leaving a big challenge in terms of low-energy consumption, large bandwidth, and direct monolithic integration with the CMOS technology.

Graphene, a unique CMOS compatible two-dimensional material with distinct properties, provides great potential in the realization of high-speed photodetectors.

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Published: 26-03-2019